Specifikáció:
roduct Category: MOSFET
Manufacturer: IR
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-262-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 11 A
Rds On - Drain-Source Resistance: 550 mOhms
Vgs - Gate-Source Voltage: 30 V
Maximum Operating Temperature: + 175 C
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single
Fall Time: 27 ns
Minimum Operating Temperature: - 55 C
Pd - Power Dissipation: 190 W
Rise Time: 34 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 32 ns
Typical Turn-On Delay Time: 14 ns
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