Specifikáció:
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Maximum Power Dissipation (Pd): 3.1 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 9(8) A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 18(16) nS
Drain-Source Capacitance (Cd): 00(220) pF
Maximum Drain-Source On-State Resistance (Rds): 0.024(0.036) Ohm
Package: TO252-4L
A termék adatlapja itt megtekinthető.
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