Specifikáció:
Manufacturer: Onsemi
Product Category: IGBT Transistors
RoHS: yes
Technology: Si
Package/Case: TO-3PN
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.8 V
Maximum Gate Emitter Voltage: 30 V
Continuous Collector Current at 25 C: 120 A
Pd - Power Dissipation: 306 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Series: FGA6560WDF
Packaging: Tube
Brand: onsemi / Fairchild
Continuous Collector Current Ic Max: 120 A
Gate-Emitter Leakage Current: 400 nA
Product Type: IGBT Transistors
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