Specifikáció:
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 100
Maximum collector-base voltage |Ucb|, V: 1000
Maximum collector-emitter voltage |Uce|, V: 400
Maximum emitter-base voltage |Ueb|, V: 7
Maximum collector current |Ic max|, A: 10
Maksimalna temperatura (Tj), °C: 200
Transition frequency (ft), MHz: 6
Forward current transfer ratio (hFE), min: 15
ROHS complient
A termék adatlapja itt megtekinthető.
|
|