Specifikáció:
Product Category: Bipolar Transistors - BJT
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 100 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 10 A
Frequency: 3MHz
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hFE Min: 40 at 1 A at 4 V
Minimum Operating Temperature: - 65 C
Pd - Power Dissipation: 80 W
|
|