Specifikáció:
oduct Category: MOSFET
Manufacturer: Infineon
RoHS: RoHS Compliant
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 41 A
Rds On - Drain-Source Resistance: 23 mOhms
Vgs - Gate-Source Voltage: 20 V
Qg - Gate Charge: 42 nC
Packaging: Tube
Brand: Infineon Technologies
Pd - Power Dissipation: 83 W
Factory Pack Quantity: 50
Transistor Type: 1 N-Channel
A termék bővebb angol nyelvű leírása itt megtekinthető.
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