Specifikáció:
Manufacturer: Infineon
Product Category: MOSFET
RoHS: yes
Technology: Si
Mounting Style: SMD/SMT
Package/Case: SO-8
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Vds - Drain-Source Breakdown Voltage: - 40 V
Id - Continuous Drain Current: - 10.5 A
Rds On - Drain-Source Resistance: 25 mOhms
Vgs th - Gate-Source Threshold Voltage:- 3 V
Vgs - Gate-Source Voltage: 20 V
Qg - Gate Charge: 73 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single Quad Drain Triple Source
Channel Mode: Enhancement
Transistor Type: 1 P-Channel
Type: HEXFET Power MOSFET
Brand: Infineon / IR
Forward Transconductance - Min: 17 S
Fall Time: 97 ns
Pd - Power Dissipation: 2.5 W
Rise Time: 490 ns
Typical Turn-Off Delay Time: 210 ns
Typical Turn-On Delay Time: 52 ns
A termék bővebb leírása itt megtekinthető.
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