Specifikáció:
Manufacturer: International Rectifier
Product Category: MOSFET
RoHS: yes
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 9.8 A
Rds On - Drain-Source Resistance: 180 mOhms
Vgs th - Gate-Source Threshold Voltage: 2 V
Vgs - Gate-Source Voltage: 10 V
Qg - Gate Charge: 70 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd - Power Dissipation: 40 W
Channel Mode: Enhancement
Packaging: Tube
Transistor Type: 1 N-Channel
Forward Transconductance - Min: 5.2 S
Fall Time: 36 ns
Product Type: MOSFET
Rise Time: 51 ns
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