Specifikáció:
Manufacturer: Infineon
Product Category: MOSFET
RoHS: yes
Technology: Si
Mounting Style: SMD/SMT
Package/Case: SO-8
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Vds - Drain-Source Breakdown Voltage: - 12 V
Id - Continuous Drain Current: - 16 A
Rds On - Drain-Source Resistance: 7 mOhms
Vgs - Gate-Source Voltage: 8 V
Qg - Gate Charge: 91 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single Quad Drain Triple Source
Pd - Power Dissipation: 2.5 W
Channel Mode: Enhancement
Transistor Type: 1 P-Channel
Type: HEXFET Power MOSFET
Brand: Infineon Technologies
Fall Time: 200 ns
Product Type: MOSFET
Rise Time: 12 ns
Factory Pack Quantity: 3800
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 271 ns
Typical Turn-On Delay Time: 13 ns
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