Specifikáció:
Manufacturer: Toshiba
Product Category: MOSFET
RoHS: yes
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-3PL
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 12 A
Vgs - Gate-Source Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd - Power Dissipation: 150 W
Channel Mode: Enhancement
Packaging: Tray
Transistor Type: 1 N-Channel
Fall Time: 60 ns
Rise Time: 25 ns
A termék bővebb leírása itt megtekinthető.
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